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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2078
*Wit
DESCRIPTION With TO-220 package *Low collector saturation voltage APPLICATIONS *27MHz RF power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 80 75 5 3 5 1.2 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1A; IB=0.1 A IC=1A; IB=0.1 A IC=0.1mA; IE=0 IC=1mA;RBE=150< IE=0.1mA; IC=0 VCB=40V;IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=10V 100 25 45 80 75 5 MIN
2SC2078
SYMBOL VCEsat VBEsat V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE COB fT
TYP. 0.15 0.9
MAX 0.6 1.2
UNIT V V V V V
10 10 200
A A
pF MHz
hFE Classifications B 25-50 C 40-80 D 60-120 E 100-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2078
Fig.2 outline dimensions (unindicated tolerance:0.10 mm)
3


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